IndiumV3, Main, Repository, bibRecord, 000021

The deposition of low temperature sputtered In2O3 films using pulsed d.c magnetron sputtering from a powder target

Identifieur interne : 000021 ( Main/Repository ); précédent : 000020; suivant : 000022

The deposition of low temperature sputtered In2O3 films using pulsed d.c magnetron sputtering from a powder target

Auteurs : RBID : Pascal:14-0084424

Descripteurs français

Pascal (Inist)
- Dépôt pulvérisation, Couche mince, Dépôt physique phase vapeur, Pulvérisation cathodique, Couche oxyde, Cellule solaire, Verre, Traitement thermique, Diffraction RX, Spectre UV visible, Microscopie force atomique, Profilométrie, Analyse structurale, Conductivité électrique, Oxyde d'indium, Pulvérisation irradiation, In2O3, Substrat verre, 8115C, 8460J, 6855J, 7361.
Wicri :
- concept : Verre.

English descriptors

KwdEn :
- Atomic force microscopy, Cathode sputtering, Electrical conductivity, Glass, Heat treatments, Indium oxide, Oxide layer, Physical vapor deposition, Profilometry, Solar cells, Sputter deposition, Sputtering, Structural analysis, Thin films, Ultraviolet visible spectrum, XRD.

Abstract

Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In₂O₃ films from In₂O₃ powdered targets using a pulsed d.c magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV-vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen.

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to stream Main, to step Corpus: 000089

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Pascal:14-0084424

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The deposition of low temperature sputtered In<sub>2</sub>
O<sub>3</sub>
 films using pulsed d.c magnetron sputtering from a powder target</title>
<author><name sortKey="Karthikeyan, Sreejith" uniqKey="Karthikeyan S">Sreejith Karthikeyan</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials & Physics Research Centre, University of Salford, The Crescent</s1>
<s2>Salford, M5 4WT</s2>
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<country>Royaume-Uni</country>
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<region nuts="2" type="region">Grand Manchester</region>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Minnesota</s1>
<s2>Minneapolis, MN 55414</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Minneapolis, MN 55414</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hill, Arthur E" uniqKey="Hill A">Arthur E. Hill</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials & Physics Research Centre, University of Salford, The Crescent</s1>
<s2>Salford, M5 4WT</s2>
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<author><name sortKey="Pilkington, Richard D" uniqKey="Pilkington R">Richard D. Pilkington</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Materials & Physics Research Centre, University of Salford, The Crescent</s1>
<s2>Salford, M5 4WT</s2>
<s3>GBR</s3>
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<country>Royaume-Uni</country>
<wicri:noRegion>Salford, M5 4WT</wicri:noRegion>
<orgName type="university">Université de Salford</orgName>
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<term>Cathode sputtering</term>
<term>Electrical conductivity</term>
<term>Glass</term>
<term>Heat treatments</term>
<term>Indium oxide</term>
<term>Oxide layer</term>
<term>Physical vapor deposition</term>
<term>Profilometry</term>
<term>Solar cells</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Structural analysis</term>
<term>Thin films</term>
<term>Ultraviolet visible spectrum</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term>
<term>Couche mince</term>
<term>Dépôt physique phase vapeur</term>
<term>Pulvérisation cathodique</term>
<term>Couche oxyde</term>
<term>Cellule solaire</term>
<term>Verre</term>
<term>Traitement thermique</term>
<term>Diffraction RX</term>
<term>Spectre UV visible</term>
<term>Microscopie force atomique</term>
<term>Profilométrie</term>
<term>Analyse structurale</term>
<term>Conductivité électrique</term>
<term>Oxyde d'indium</term>
<term>Pulvérisation irradiation</term>
<term>In2O3</term>
<term>Substrat verre</term>
<term>8115C</term>
<term>8460J</term>
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<front><div type="abstract" xml:lang="en">Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In<sub>2</sub>
O<sub>3</sub>
 films from In<sub>2</sub>
O<sub>3</sub>
 powdered targets using a pulsed d.c magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV-vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen.</div>
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<fC01 i1="01" l="ENG"><s0>Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In<sub>2</sub>
O<sub>3</sub>
 films from In<sub>2</sub>
O<sub>3</sub>
 powdered targets using a pulsed d.c magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV-vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen.</s0>
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<s5>14</s5>
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<s5>14</s5>
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<s5>29</s5>
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<s4>INC</s4>
<s5>73</s5>
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</fN21>
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The deposition of low temperature sputtered In2O3 films using pulsed d.c magnetron sputtering from a powder target

The deposition of low temperature sputtered In2O3 films using pulsed d.c magnetron sputtering from a powder target

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri